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5961-01-499-8875

20 Products

325679

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014998875

NSN

5961-01-499-8875

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325679

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014998875

NSN

5961-01-499-8875

MFG

KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE

Description

CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REQUEST NAME DIODE SEMICONDUCTOR DEVICE:USE ON 473597-4 SMOKE DECTERTOR/MODEL 2000:BREAKDOWN VOLTAGE WITH TEST CONDITIONS IR=50MICROAMPERES,MIN. 200VOLTS
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKOVER VOLTAGE, INSTANTANEOUS

649607

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996722

NSN

5961-01-499-6722

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649607

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996722

NSN

5961-01-499-6722

MFG

RAYTHEON COMPANY DBA RAYTHEON

BYD77D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996722

NSN

5961-01-499-6722

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BYD77D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996722

NSN

5961-01-499-6722

MFG

PHILIPS SEMICONDUCTORS INC

6030010

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014996929

NSN

5961-01-499-6929

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6030010

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014996929

NSN

5961-01-499-6929

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST

VQ1001J

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014996929

NSN

5961-01-499-6929

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VQ1001J

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014996929

NSN

5961-01-499-6929

MFG

SILICONIX INCORPORATED D IV SILICONIX

863-097-001

TRANSISTOR

NSN, MFG P/N

5961014996937

NSN

5961-01-499-6937

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863-097-001

TRANSISTOR

NSN, MFG P/N

5961014996937

NSN

5961-01-499-6937

MFG

PARKER-HANNIFIN CORPORATION DBA ELECTRONICS SYSTEMS DIVISION DIV ELECTRONIC SYSTEMS DIVISION

CZT3019

TRANSISTOR

NSN, MFG P/N

5961014996937

NSN

5961-01-499-6937

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CZT3019

TRANSISTOR

NSN, MFG P/N

5961014996937

NSN

5961-01-499-6937

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC

1N4470US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996942

NSN

5961-01-499-6942

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1N4470US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996942

NSN

5961-01-499-6942

MFG

MICRO USPD INC

849-088-4470

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996942

NSN

5961-01-499-6942

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849-088-4470

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996942

NSN

5961-01-499-6942

MFG

PARKER-HANNIFIN CORPORATION DBA ELECTRONICS SYSTEMS DIVISION DIV ELECTRONIC SYSTEMS DIVISION

849-120-050

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996943

NSN

5961-01-499-6943

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849-120-050

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996943

NSN

5961-01-499-6943

MFG

PARKER-HANNIFIN CORPORATION DBA ELECTRONICS SYSTEMS DIVISION DIV ELECTRONIC SYSTEMS DIVISION

SMBJ5350B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996943

NSN

5961-01-499-6943

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SMBJ5350B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014996943

NSN

5961-01-499-6943

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

44-9756

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014997368

NSN

5961-01-499-7368

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44-9756

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014997368

NSN

5961-01-499-7368

MFG

THERMO KING CORPORATION DBA PHOENIX GLOBAL DISTIRBUTION.

Description

FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: REFRIGERATION UNIT, THERMO KING CORPORATION, MODEL MD-11
SPECIAL FEATURES: SUB ASSEMBLY IS ALTERNATOR ASSEMBLY, 23 AMP

ICT-10C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014997478

NSN

5961-01-499-7478

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ICT-10C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014997478

NSN

5961-01-499-7478

MFG

GENERAL SEMICONDUCTOR INC

Description

SPECIAL FEATURES: SEMICONDUCTOR; OBSOLETE, CATALOGED FOR LOGISTICAL PURPOSES

IXFN106N20

TRANSISTOR

NSN, MFG P/N

5961014998198

NSN

5961-01-499-8198

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IXFN106N20

TRANSISTOR

NSN, MFG P/N

5961014998198

NSN

5961-01-499-8198

MFG

IXYS CORPORATION

Description

OVERALL HEIGHT: 0.460 INCHES MINIMUM AND 0.481 INCHES MAXIMUM
OVERALL LENGTH: 1.496 INCHES MINIMUM AND 1.505 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.001 INCHES MAXIMUM
SPECIAL FEATURES: POWER MOSFET; MINIBLOC WITH ALUMINUM NITRIDE ISOLATION

MOD04515

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014998419

NSN

5961-01-499-8419

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MOD04515

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014998419

NSN

5961-01-499-8419

MFG

POWERWARE CORPORATION DBA BEST POWER

Description

III END ITEM IDENTIFICATION: DUAL REDUNDANT POWER DISTRIBUTION SYSTEM (DRPDS)
SPECIAL FEATURES: NOMENCLATURE SCR MODULE

649866

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014998517

NSN

5961-01-499-8517

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649866

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014998517

NSN

5961-01-499-8517

MFG

RAYTHEON COMPANY DBA RAYTHEON

GL34D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014998517

NSN

5961-01-499-8517

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GL34D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014998517

NSN

5961-01-499-8517

MFG

GENERAL SEMICONDUCTOR INC

MJE-1123

TRANSISTOR

NSN, MFG P/N

5961014998715

NSN

5961-01-499-8715

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MJE-1123

TRANSISTOR

NSN, MFG P/N

5961014998715

NSN

5961-01-499-8715

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM OPERATING TEMPERATURE MINUS 65.0 DEGREES C; PART NAME ASSIGNED BY CONTROLLING AGENCY - TRANSISTOR, PNP LOW DROPOUT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHA

MJE1123

TRANSISTOR

NSN, MFG P/N

5961014998715

NSN

5961-01-499-8715

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MJE1123

TRANSISTOR

NSN, MFG P/N

5961014998715

NSN

5961-01-499-8715

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM OPERATING TEMPERATURE MINUS 65.0 DEGREES C; PART NAME ASSIGNED BY CONTROLLING AGENCY - TRANSISTOR, PNP LOW DROPOUT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHA

Q36-0001-001

TRANSISTOR

NSN, MFG P/N

5961014998715

NSN

5961-01-499-8715

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Q36-0001-001

TRANSISTOR

NSN, MFG P/N

5961014998715

NSN

5961-01-499-8715

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM OPERATING TEMPERATURE MINUS 65.0 DEGREES C; PART NAME ASSIGNED BY CONTROLLING AGENCY - TRANSISTOR, PNP LOW DROPOUT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHA