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5961-01-499-8875
20 Products
MMBD1504A A14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014998875
NSN
5961-01-499-8875
MMBD1504A A14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014998875
NSN
5961-01-499-8875
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REQUEST NAME DIODE SEMICONDUCTOR DEVICE:USE ON 473597-4 SMOKE DECTERTOR/MODEL 2000:BREAKDOWN VOLTAGE WITH TEST CONDITIONS IR=50MICROAMPERES,MIN. 200VOLTS
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKOVER VOLTAGE, INSTANTANEOUS
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648429
TRANSISTOR
NSN, MFG P/N
5961014999351
NSN
5961-01-499-9351
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
1N6292A
TRANSISTOR
NSN, MFG P/N
5961014999374
NSN
5961-01-499-9374
MFG
MICROSEMI CORPORATION
Description
TRANSISTOR
Related Searches:
649884
TRANSISTOR
NSN, MFG P/N
5961014999374
NSN
5961-01-499-9374
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
0180734T95
TRANSISTOR
NSN, MFG P/N
5961014999618
NSN
5961-01-499-9618
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SPECIAL FEATURES: INCLUDES CLIP
Related Searches:
0182989R39
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961014999705
NSN
5961-01-499-9705
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SEMICONDUCTOR DEVIC
Related Searches:
0184237T01
FILTER,FEEDTHRU
NSN, MFG P/N
5961014999708
NSN
5961-01-499-9708
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
FILTER,FEEDTHRU
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KFE3900-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014999824
NSN
5961-01-499-9824
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KFE3900-1
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
KFJ3900-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014999825
NSN
5961-01-499-9825
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KFJ3900-1
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
648424
TRANSISTOR
NSN, MFG P/N
5961014999905
NSN
5961-01-499-9905
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
TVS410SMHR
TRANSISTOR
NSN, MFG P/N
5961014999905
NSN
5961-01-499-9905
MFG
MICROSEMI CORPORATION
Description
TRANSISTOR
Related Searches:
648434
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000262
NSN
5961-01-500-0262
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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RZ211
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000262
NSN
5961-01-500-0262
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
SEMICONDUCTOR DEVICE,DIODE
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GG4826353A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000428
NSN
5961-01-500-0428
GG4826353A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000428
NSN
5961-01-500-0428
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SPECIAL FEATURES: DIODE, BRIDGE RECTIFIER
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GG4826381A002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000429
NSN
5961-01-500-0429
GG4826381A002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000429
NSN
5961-01-500-0429
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SPECIAL FEATURES: DIODE, DUAL ULTRA FAST
Related Searches:
GG4826381A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000430
NSN
5961-01-500-0430
GG4826381A001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000430
NSN
5961-01-500-0430
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SPECIAL FEATURES: DIODE, FAST RECOVERY
Related Searches:
GG4826352A001
TRANSISTOR
NSN, MFG P/N
5961015000431
NSN
5961-01-500-0431
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SPECIAL FEATURES: TRANSISTOR, POWER FET
Related Searches:
GG4826383A003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000434
NSN
5961-01-500-0434
GG4826383A003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000434
NSN
5961-01-500-0434
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
SPECIAL FEATURES: DIODE, ZENER, 15V
Related Searches:
649608
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000638
NSN
5961-01-500-0638
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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BYD37G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015000638
NSN
5961-01-500-0638
MFG
AMPEREX ELECTRONIC CORP
Description
SEMICONDUCTOR DEVICE,DIODE
