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5961-00-065-3292
20 Products
8018-029
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000653292
NSN
5961-00-065-3292
8018-029
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000653292
NSN
5961-00-065-3292
MFG
JAIDINGER MFG. CO. INC. DBA JAICO PRODUCTS
Description
MOUNTING METHOD: THREADED STUD
Related Searches:
MBD702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000648702
NSN
5961-00-064-8702
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.570 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR1215SL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000648702
NSN
5961-00-064-8702
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.570 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR1221FL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000648702
NSN
5961-00-064-8702
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.570 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
755-409096
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000648982
NSN
5961-00-064-8982
755-409096
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000648982
NSN
5961-00-064-8982
MFG
VIASYS RESPIRATORY CARE INC. DBA BIOSYS HEALTHCARE
Description
DESIGN CONTROL REFERENCE: 755-409096
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 53110
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
106296061
SEMICONDUCTOR
NSN, MFG P/N
5961000650407
NSN
5961-00-065-0407
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR
Related Searches:
SV3176
SEMICONDUCTOR
NSN, MFG P/N
5961000650407
NSN
5961-00-065-0407
MFG
MTK ELECTRONICS INC.
Description
SEMICONDUCTOR
Related Searches:
94-43-235
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000650546
NSN
5961-00-065-0546
MFG
SYPRIS ELECTRONICS LLC
Description
DESIGN CONTROL REFERENCE: 94-43-235
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 28009
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
CL603A
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961000650767
NSN
5961-00-065-0767
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
OVERALL LENGTH: 0.500 INCHES NOMINAL
Related Searches:
X32141
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961000650767
NSN
5961-00-065-0767
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
OVERALL LENGTH: 0.500 INCHES NOMINAL
Related Searches:
5A2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000651397
NSN
5961-00-065-1397
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: 5A2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N759
TRANSISTOR
NSN, MFG P/N
5961000651567
NSN
5961-00-065-1567
MFG
NATIONAL SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL LENGTH: 0.195 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
A163B4-12
TRANSISTOR
NSN, MFG P/N
5961000651567
NSN
5961-00-065-1567
MFG
HORIZON AEROSPACE LLC DBA MAGNETICS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL LENGTH: 0.195 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
10936129
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000651975
NSN
5961-00-065-1975
10936129
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000651975
NSN
5961-00-065-1975
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 8.250 INCHES NOMINAL
OVERALL WIDTH: 4.625 INCHES NOMINAL
Related Searches:
D0-1200-010-06
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000651975
NSN
5961-00-065-1975
D0-1200-010-06
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000651975
NSN
5961-00-065-1975
MFG
FANSTEEL INC. DBA AUTOMATED EQUIPMENT & TOOLING DIVISION
Description
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 8.250 INCHES NOMINAL
OVERALL WIDTH: 4.625 INCHES NOMINAL
Related Searches:
134131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000652121
NSN
5961-00-065-2121
MFG
C E ELGIN ELECTRONICS DIV OF COMBUSTION ENGINEERING INC
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
16FR40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000652121
NSN
5961-00-065-2121
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
5SMB10L
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000653261
NSN
5961-00-065-3261
5SMB10L
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000653261
NSN
5961-00-065-3261
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 5 RING 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 0.875 INCHES NOMINAL
OVERALL WIDTH: 0.719 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
2N2223
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000654487
NSN
5961-00-065-4487
2N2223
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000654487
NSN
5961-00-065-4487
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SPECIAL FEATURES: NPN TRANSISTOR; SILICON; 0.260 IN. H; 0.335 IN. DIA
SPECIFICATION/STANDARD DATA: 80131-RELEASE 3628 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
41175-142-3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000654487
NSN
5961-00-065-4487
41175-142-3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000654487
NSN
5961-00-065-4487
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
SPECIAL FEATURES: NPN TRANSISTOR; SILICON; 0.260 IN. H; 0.335 IN. DIA
SPECIFICATION/STANDARD DATA: 80131-RELEASE 3628 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
