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5961-01-176-3396
20 Products
4320-1000
TRANSISTOR
NSN, MFG P/N
5961011763396
NSN
5961-01-176-3396
MFG
WARNER ROBINS AIR LOGISTICS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
PRECIOUS MATERIAL: GOLD
PRECIOUS MATERIAL AND LOCATION: LEADS AND INTERNAL SURFACES GOLD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE V
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58002504
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
58002504
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
MFG
THALES SYSTEMES AEROPORTES S.A
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 58260-13084207 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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A1194196
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
A1194196
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
MFG
THALES AVIONICS SA
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 58260-13084207 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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S6A340X
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
S6A340X
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 58260-13084207 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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SA9356
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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5961011761757
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5961-01-176-1757
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011761757
NSN
5961-01-176-1757
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 58260-13084207 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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SEMICONDUCTOR DEVICE ASSEMBLY
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5961011761787
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5961-01-176-1787
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011761787
NSN
5961-01-176-1787
MFG
MESSIER DOWTY LTD
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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151-1070-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011761799
NSN
5961-01-176-1799
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011761799
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5961-01-176-1799
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SILICONIX INCORPORATED D IV SILICONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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SFC-7090
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011761799
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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U3374
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011761799
NSN
5961-01-176-1799
MFG
TELCOM SEMICONDUCTOR INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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0N351994-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011761865
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011761865
NSN
5961-01-176-1865
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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5082-7752
TRANSISTOR
NSN, MFG P/N
5961011763248
NSN
5961-01-176-3248
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
TRANSISTOR
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2836-217
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011763251
NSN
5961-01-176-3251
MFG
RELIANCE COMM/TEC CORP LORAIN PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.060 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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2836-217-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011763251
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5961-01-176-3251
2836-217-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011763251
NSN
5961-01-176-3251
MFG
LORAIN ELECTRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.060 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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46130
TRANSISTOR
NSN, MFG P/N
5961011763396
NSN
5961-01-176-3396
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
PRECIOUS MATERIAL: GOLD
PRECIOUS MATERIAL AND LOCATION: LEADS AND INTERNAL SURFACES GOLD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE V
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48-P02526M001
TRANSISTOR
NSN, MFG P/N
5961011763396
NSN
5961-01-176-3396
MFG
ACRIAN INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
PRECIOUS MATERIAL: GOLD
PRECIOUS MATERIAL AND LOCATION: LEADS AND INTERNAL SURFACES GOLD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE V
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4852H
TRANSISTOR
NSN, MFG P/N
5961011763396
NSN
5961-01-176-3396
MFG
RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
PRECIOUS MATERIAL: GOLD
PRECIOUS MATERIAL AND LOCATION: LEADS AND INTERNAL SURFACES GOLD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE V
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113193
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011763397
NSN
5961-01-176-3397
113193
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011763397
NSN
5961-01-176-3397
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 113193
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-118
MANUFACTURERS CODE: 94271
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 12.063 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM GATE POWER DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPP
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011763397
NSN
5961-01-176-3397
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011763397
NSN
5961-01-176-3397
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 113193
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-118
MANUFACTURERS CODE: 94271
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 12.063 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM GATE POWER DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPP
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7208804
TRANSISTOR
NSN, MFG P/N
5961011763636
NSN
5961-01-176-3636
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
DESIGN CONTROL REFERENCE: 7208804
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MANUFACTURERS CODE: 93322
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
