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5961-01-298-0778
20 Products
SCPAR1F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012980778
NSN
5961-01-298-0778
SCPAR1F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012980778
NSN
5961-01-298-0778
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES FORWARD CURRENT, TOTAL RMS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
Related Searches:
40570011
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012981648
NSN
5961-01-298-1648
40570011
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012981648
NSN
5961-01-298-1648
MFG
MILES LABORATORIES INC MILES SCIENTIFIC DIV
Description
DESIGN CONTROL REFERENCE: 40570011
MANUFACTURERS CODE: 08840
SPECIAL FEATURES: USED ON SLIDE DRYER,MODEL NO. 4676
THE MANUFACTURERS DATA:
Related Searches:
352250044644
TRANSISTOR
NSN, MFG P/N
5961012981920
NSN
5961-01-298-1920
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MINIMUM
OVERALL WIDTH: 0.880 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
411212
TRANSISTOR
NSN, MFG P/N
5961012981920
NSN
5961-01-298-1920
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MINIMUM
OVERALL WIDTH: 0.880 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
LT1817
TRANSISTOR
NSN, MFG P/N
5961012981920
NSN
5961-01-298-1920
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MINIMUM
OVERALL WIDTH: 0.880 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
MRF548
TRANSISTOR
NSN, MFG P/N
5961012981920
NSN
5961-01-298-1920
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MINIMUM
OVERALL WIDTH: 0.880 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
TF50-655-01
TRANSISTOR
NSN, MFG P/N
5961012981921
NSN
5961-01-298-1921
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
037-386
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012981922
NSN
5961-01-298-1922
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1854-0847
TRANSISTOR
NSN, MFG P/N
5961012982066
NSN
5961-01-298-2066
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
MJE12007
TRANSISTOR
NSN, MFG P/N
5961012982066
NSN
5961-01-298-2066
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
1666117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012982067
NSN
5961-01-298-2067
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1N5819
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012982237
NSN
5961-01-298-2237
MFG
GENERAL INSTRUMENT CORP DEFENSE SYSTEMS GROUP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4070;REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
A1238203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012982237
NSN
5961-01-298-2237
MFG
THALES AVIONICS SA
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4070;REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
KJN327A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012982237
NSN
5961-01-298-2237
MFG
DRS TECHNOLOGIES INC DBA D R S POWER & CONTROL TECHNOLOGIES INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4070;REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
LO4070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012982237
NSN
5961-01-298-2237
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4070;REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
2N2306
TRANSISTOR
NSN, MFG P/N
5961012982418
NSN
5961-01-298-2418
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
TRANSISTOR
Related Searches:
FE30C
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012982557
NSN
5961-01-298-2557
FE30C
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012982557
NSN
5961-01-298-2557
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
SPECIAL FEATURES: DUAL POSITIVE CENTER TAP;M55.0 TO P150.0 DEG C OPERATING TEMP RANGE;METAL CASE;2 PIN TERMINALS
Related Searches:
M19500/508
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012982610
NSN
5961-01-298-2610
M19500/508
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012982610
NSN
5961-01-298-2610
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/508
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
SPEC/STD CONTROLLING DATA:
Related Searches:
M19500/508-80/433
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012982610
NSN
5961-01-298-2610
M19500/508-80/433
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012982610
NSN
5961-01-298-2610
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/508
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
SPEC/STD CONTROLLING DATA:
Related Searches:
GBPC608
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012982611
NSN
5961-01-298-2611
GBPC608
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012982611
NSN
5961-01-298-2611
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.270 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 STANDARD TUBE BASE
