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5961-01-337-6501
20 Products
90024-02TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013376501
NSN
5961-01-337-6501
90024-02TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013376501
NSN
5961-01-337-6501
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM REGULATOR CURRENT ALL SEMICONDUCTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 90024-02TX
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 037Z3-90024 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REGULATOR VOLTAGE ALL SEMICONDUCTOR
Related Searches:
PIC646
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013376501
NSN
5961-01-337-6501
PIC646
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013376501
NSN
5961-01-337-6501
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM REGULATOR CURRENT ALL SEMICONDUCTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 90024-02TX
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 037Z3-90024 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REGULATOR VOLTAGE ALL SEMICONDUCTOR
Related Searches:
1810210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013377230
NSN
5961-01-337-7230
MFG
OSHKOSH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
END ITEM IDENTIFICATION: 2320-01-318-9902 TRUCK,TRACTOR
FEATURES PROVIDED: W/HEAT SINK
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.078 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.231 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM NONREPETITIVE PE
~1: AK REVERSE VOLTAGE
Related Searches:
300UR60A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013377230
NSN
5961-01-337-7230
MFG
ELECTRONIC INDUSTRIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
END ITEM IDENTIFICATION: 2320-01-318-9902 TRUCK,TRACTOR
FEATURES PROVIDED: W/HEAT SINK
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.078 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.231 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM NONREPETITIVE PE
~1: AK REVERSE VOLTAGE
Related Searches:
SKN 240/02 K11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013377230
NSN
5961-01-337-7230
SKN 240/02 K11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013377230
NSN
5961-01-337-7230
MFG
SEMIKRON INTL INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
END ITEM IDENTIFICATION: 2320-01-318-9902 TRUCK,TRACTOR
FEATURES PROVIDED: W/HEAT SINK
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.078 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.231 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM NONREPETITIVE PE
~1: AK REVERSE VOLTAGE
Related Searches:
6206
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013377232
NSN
5961-01-337-7232
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
NSR8141
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013377232
NSN
5961-01-337-7232
NSR8141
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013377232
NSN
5961-01-337-7232
MFG
DIODES INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
657-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013377734
NSN
5961-01-337-7734
MFG
RS COMPONENTS LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SB530
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013377734
NSN
5961-01-337-7734
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
048931-0001
TRANSISTOR
NSN, MFG P/N
5961013378039
NSN
5961-01-337-8039
MFG
THALES ATM INC.
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH NAVY AIR
III END ITEM IDENTIFICATION: LYNX-ATL2,HEWLETT-PACKARD CO
Related Searches:
HXTR-3104
TRANSISTOR
NSN, MFG P/N
5961013378039
NSN
5961-01-337-8039
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH NAVY AIR
III END ITEM IDENTIFICATION: LYNX-ATL2,HEWLETT-PACKARD CO
Related Searches:
SC/A4/51339
TRANSISTOR
NSN, MFG P/N
5961013378040
NSN
5961-01-337-8040
MFG
VOSPER-MANTECH LTD
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
SDM3305
TRANSISTOR
NSN, MFG P/N
5961013378040
NSN
5961-01-337-8040
MFG
SOLITRON DEVICES INC.
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
2736-7510
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013378042
NSN
5961-01-337-8042
MFG
TRANSAERO INC.
Description
SPECIFICATION/STANDARD DATA: 27541-2736 MANUFACTURERS STANDARD
Related Searches:
JANTXV2N6352
TRANSISTOR
NSN, MFG P/N
5961013378553
NSN
5961-01-337-8553
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6352
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/472
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.188 INCHES MINIMUM AND 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA:
Related Searches:
JANTXV1N5642A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013378555
NSN
5961-01-337-8555
JANTXV1N5642A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013378555
NSN
5961-01-337-8555
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5642A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
TERMINAL
Related Searches:
DD111M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013378556
NSN
5961-01-337-8556
DD111M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013378556
NSN
5961-01-337-8556
MFG
SPECTRUM MICROWAVE INC . DIV SPECTRUM MICROWAVE - MARLBOROUGH OPERATIONS
Description
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: COUNTERMEASURES SET AN/ALQ-135B
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.675 INCHES NOMINAL
OVERALL WIDTH: 0.425 INCHES MAXIMUM
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
JANTXV1N4487
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013379213
NSN
5961-01-337-9213
JANTXV1N4487
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013379213
NSN
5961-01-337-9213
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4487
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 813
Related Searches:
101-9832
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013379214
NSN
5961-01-337-9214
101-9832
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013379214
NSN
5961-01-337-9214
MFG
BEHLMAN ELECTRONICS INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.312 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
UES2602HR
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013379214
NSN
5961-01-337-9214
UES2602HR
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013379214
NSN
5961-01-337-9214
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.312 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
