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5962-01-270-0687

20 Products

043048-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

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043048-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

MFG

SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF EIGHT LINE
FEATURES PROVIDED: 2-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VO

M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700683

NSN

5962-01-270-0683

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M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700683

NSN

5962-01-270-0683

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 95.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 028

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700683

NSN

5962-01-270-0683

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ROM/PROM FAMILY 028

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700683

NSN

5962-01-270-0683

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 95.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

156-2473-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

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156-2473-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

MFG

TEKTRONIX INC. DBA TEKTRONIX

DS2046-200

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

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DS2046-200

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

MFG

DALLAS SEMICONDUCTOR CORPORATION DBA MAXIM DALLAS DIRECT

HM6264ALP-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

View More Info

HM6264ALP-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

MFG

HITACHI AMERICA LTD. DIV POWER SYSTEMS

UPD4464C-20

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

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UPD4464C-20

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

UPD4464C15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

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UPD4464C15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700684

NSN

5962-01-270-0684

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

51NW9615P38

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

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51NW9615P38

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: DYNAMIC AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 62786-HM50256-15 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HM50256-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

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HM50256-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

MFG

HITACHI AMERICA LTD. DIV POWER SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: DYNAMIC AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 62786-HM50256-15 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

KM41C256P-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

View More Info

KM41C256P-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

MFG

SAMSUNG SEMICONDUCTOR INC

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: DYNAMIC AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 62786-HM50256-15 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TMS4256-15NL

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

View More Info

TMS4256-15NL

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: DYNAMIC AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 62786-HM50256-15 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

UPD41256C15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

View More Info

UPD41256C15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700685

NSN

5962-01-270-0685

MFG

NEC AMERICA INC

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: DYNAMIC AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 62786-HM50256-15 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM9122-35DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700686

NSN

5962-01-270-0686

View More Info

AM9122-35DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700686

NSN

5962-01-270-0686

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER OR GOLD
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MA

CY7C122-35DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700686

NSN

5962-01-270-0686

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CY7C122-35DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700686

NSN

5962-01-270-0686

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER OR GOLD
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MA

ES5470-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700686

NSN

5962-01-270-0686

View More Info

ES5470-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012700686

NSN

5962-01-270-0686

MFG

DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER OR GOLD
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MA

13208513-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

View More Info

13208513-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

MFG

GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF EIGHT LINE
FEATURES PROVIDED: 2-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VO

1815614

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

View More Info

1815614

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

MFG

THALES UK LIMITED, AEROSPACE DIVISION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF EIGHT LINE
FEATURES PROVIDED: 2-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VO

2691661-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

View More Info

2691661-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF EIGHT LINE
FEATURES PROVIDED: 2-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VO

28734-0120-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

View More Info

28734-0120-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012700687

NSN

5962-01-270-0687

MFG

THALES UK LIMITED, AEROSPACE DIVISION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF EIGHT LINE
FEATURES PROVIDED: 2-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VO