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5961-01-029-1013
20 Products
81005
TRANSISTOR
NSN, MFG P/N
5961010291013
NSN
5961-01-029-1013
MFG
AIKEN ADVANCED SYSTEMS INC A DIV OF AMSTAR TECHNICAL PRODUCTS INC AN AFFIL OF AMSTAR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5591 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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2888021-1
TRANSISTOR
NSN, MFG P/N
5961010291014
NSN
5961-01-029-1014
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2888021 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE
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P1136
TRANSISTOR
NSN, MFG P/N
5961010291014
NSN
5961-01-029-1014
MFG
TELCOM SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2888021 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE
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19-1-000070
TRANSISTOR
NSN, MFG P/N
5961010291015
NSN
5961-01-029-1015
MFG
NICOLET COMPUTER GRAPHICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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553-1034-01
TRANSISTOR
NSN, MFG P/N
5961010291015
NSN
5961-01-029-1015
MFG
L-3 COMMUNICATIONS AVIONICS SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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MJE802
TRANSISTOR
NSN, MFG P/N
5961010291015
NSN
5961-01-029-1015
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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3505020-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291017
NSN
5961-01-029-1017
3505020-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291017
NSN
5961-01-029-1017
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA LAND & SELF PROTECTION SYSTEM DIVISION DIV LAND & SELF PROTECTION SYSTEMS DIV
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
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SA9330
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291017
NSN
5961-01-029-1017
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
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GC1711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291018
NSN
5961-01-029-1018
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 19905-TU-511P
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.075 INCHES MINIMUM AND 0.097 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOTAL CAPACITANCE 6.8 (AT 4V,1MHZ) CT-4 (PF)
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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GC1715
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291019
NSN
5961-01-029-1019
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 19905-TU-511P
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.075 INCHES MINIMUM AND 0.097 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOTAL CAPACITANCE 15.0 (AT-4V,1 MHZ) CT-4 (PF)
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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30-158-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291020
NSN
5961-01-029-1020
MFG
BELL HELICOPTER TEXTRON INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE IS ENCAPSULATED IN REMOVABLE MODULE BLOCK
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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591824-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291020
NSN
5961-01-029-1020
MFG
TYCO ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE IS ENCAPSULATED IN REMOVABLE MODULE BLOCK
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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GM812B1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291020
NSN
5961-01-029-1020
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE IS ENCAPSULATED IN REMOVABLE MODULE BLOCK
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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LS13303
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291020
NSN
5961-01-029-1020
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE IS ENCAPSULATED IN REMOVABLE MODULE BLOCK
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
MRTB20E09-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291020
NSN
5961-01-029-1020
MRTB20E09-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291020
NSN
5961-01-029-1020
MFG
AMPHENOL OPTIMIZE MANUFACTURING CO . DIV AMPHENOL AEROSPACE OPERATIONS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE IS ENCAPSULATED IN REMOVABLE MODULE BLOCK
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
VA522B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291021
NSN
5961-01-029-1021
MFG
CRYSTALONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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2887864-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291022
NSN
5961-01-029-1022
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.100 INCHES MAXIMUM
OVERALL LENGTH: 3.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.240 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 10001-2887864 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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A197PR7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291022
NSN
5961-01-029-1022
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.100 INCHES MAXIMUM
OVERALL LENGTH: 3.327 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.240 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 10001-2887864 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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1N4572
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291023
NSN
5961-01-029-1023
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2889767 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER
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2889767-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010291023
NSN
5961-01-029-1023
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2889767 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER
