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5961-01-364-7505
20 Products
962-20802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647505
NSN
5961-01-364-7505
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZL6036-01-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013646762
NSN
5961-01-364-6762
ZL6036-01-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013646762
NSN
5961-01-364-6762
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WITH FORWARD AND REVERSE MATCHED PAIRS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 NOMINAL NOISE VOLTAGE
Related Searches:
10-5106ITEM17
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013646947
NSN
5961-01-364-6947
10-5106ITEM17
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013646947
NSN
5961-01-364-6947
MFG
HENSCHEL INC. DBA L-3 HENSCHEL
Description
MATERIAL: PLASTIC
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED BASE SINGLE MOUNTING FACILITY
Related Searches:
D-20303-11
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013646947
NSN
5961-01-364-6947
D-20303-11
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013646947
NSN
5961-01-364-6947
MFG
HY-CAL ENGINEERING A UNIT OF GENERAL SIGNAL CORP
Description
MATERIAL: PLASTIC
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED BASE SINGLE MOUNTING FACILITY
Related Searches:
SDB205C
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013646947
NSN
5961-01-364-6947
SDB205C
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013646947
NSN
5961-01-364-6947
MFG
STANLEY ELECTRIC MFG CO DBA LIGHTING BY STANLEY
Description
MATERIAL: PLASTIC
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED BASE SINGLE MOUNTING FACILITY
Related Searches:
90001A1976
TRANSISTOR
NSN, MFG P/N
5961013646976
NSN
5961-01-364-6976
MFG
MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER
Description
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL LENGTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
OVERALL WIDTH: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
APT801R2CN
TRANSISTOR
NSN, MFG P/N
5961013646976
NSN
5961-01-364-6976
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL LENGTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
OVERALL WIDTH: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1N6628
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013646977
NSN
5961-01-364-6977
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.34 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
90001A1948
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013646977
NSN
5961-01-364-6977
90001A1948
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013646977
NSN
5961-01-364-6977
MFG
MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 2.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.34 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
BYM26C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013646977
NSN
5961-01-364-6977
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 2.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.34 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
C7210-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647506
NSN
5961-01-364-7506
MFG
EATON AEROSPACE LLC STERER ENGINEERING MORGAN ACTUATORS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C7210-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647507
NSN
5961-01-364-7507
MFG
EATON AEROSPACE LLC STERER ENGINEERING MORGAN ACTUATORS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N7002
TRANSISTOR
NSN, MFG P/N
5961013647859
NSN
5961-01-364-7859
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
OVERALL LENGTH: 0.105 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
927538
TRANSISTOR
NSN, MFG P/N
5961013647859
NSN
5961-01-364-7859
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
OVERALL LENGTH: 0.105 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2N3868S
TRANSISTOR
NSN, MFG P/N
5961013647860
NSN
5961-01-364-7860
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AA
POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
100G20F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647861
NSN
5961-01-364-7861
MFG
H V COMPONENT ASSOCIATES INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.050 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
463455-1A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647862
NSN
5961-01-364-7862
MFG
MILTOPE CORPORATION DBA VT MILTOPE
Description
III END ITEM IDENTIFICATION: USED ON 466769-1
SPECIAL FEATURES: DIODE WITH LUGS CRIMPED BOTH ENDS
Related Searches:
6022789-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647863
NSN
5961-01-364-7863
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: MK73/1 DCN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD PITCH IN MILLIMETERS: 8.84
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
6022789-1(VTS)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647863
NSN
5961-01-364-7863
6022789-1(VTS)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647863
NSN
5961-01-364-7863
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: MK73/1 DCN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD PITCH IN MILLIMETERS: 8.84
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
6022789-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013647864
NSN
5961-01-364-7864
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1600.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3295R
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
